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Brand Name : Hamamatsu
Model Number : S12060-10
Place of Origin : Japan
MOQ : Standard
Supply Ability : 3000/pcs/month
Delivery Time : 3-5Workingdays
Packaging Details : Standard
Price : Negotiable
Type : Near infrared type
Photosensitive area : φ1 mm
Package : Metal
Package category : TO-18
Peak sensitivity wavelength (typical) : 800 nm
Spectral response range : 400 to 1000 nm
S12060-10 Silicon Avalanche Photodiode Low Temperature Coefficient
This is an 800nm band near-infrared Si APD that can operate stably over a wide temperature range. Suitable for applications such as optical rangefinders and FSO (free space optics).
Features
- Breakdown voltage temperature coefficient: 0.4 V/℃
- High-speed response
- High sensitivity, low noise
Sensitivity (typical) | 0.5 A/W |
Dark current (maximum) | 2 nA |
Cut-off frequency (typical) | 600 MHz |
Terminal capacitance (typical) | 6 pF |
Breakdown voltage (typical) | 200 V |
Breakdown voltage temperature coefficient (typical) | 0.4 V/°C |
Gain (typical) | 100 |
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S12060-10 Silicon Avalanche Photodiode Low Temperature Coefficient Images |