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S12060-10 Silicon Avalanche Photodiode Low Temperature Coefficient

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S12060-10 Silicon Avalanche Photodiode Low Temperature Coefficient

Brand Name : Hamamatsu

Model Number : S12060-10

Place of Origin : Japan

MOQ : Standard

Supply Ability : 3000/pcs/month

Delivery Time : 3-5Workingdays

Packaging Details : Standard

Price : Negotiable

Type : Near infrared type

Photosensitive area : φ1 mm

Package : Metal

Package category : TO-18

Peak sensitivity wavelength (typical) : 800 nm

Spectral response range : 400 to 1000 nm

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S12060-10 Silicon Avalanche Photodiode Low Temperature Coefficient

This is an 800nm ​​band near-infrared Si APD that can operate stably over a wide temperature range. Suitable for applications such as optical rangefinders and FSO (free space optics).

Features
- Breakdown voltage temperature coefficient: 0.4 V/℃
- High-speed response
- High sensitivity, low noise

Sensitivity (typical) 0.5 A/W
Dark current (maximum) 2 nA
Cut-off frequency (typical) 600 MHz
Terminal capacitance (typical) 6 pF
Breakdown voltage (typical) 200 V
Breakdown voltage temperature coefficient (typical) 0.4 V/°C
Gain (typical) 100

S12060-10 Silicon Avalanche Photodiode Low Temperature Coefficient


Product Tags:

S12060-10

      

S12060-10 Si Photodiode

      

Highly Sensitive Si Photodiode

      
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